{"id":23466,"date":"2020-02-21T11:04:38","date_gmt":"2020-02-21T05:34:38","guid":{"rendered":"https:\/\/kseebsolutions.guru\/?p=23466"},"modified":"2021-07-02T15:24:56","modified_gmt":"2021-07-02T09:54:56","slug":"2nd-puc-electronics-question-bank-chapter-1","status":"publish","type":"post","link":"https:\/\/kseebsolutions.guru\/2nd-puc-electronics-question-bank-chapter-1\/","title":{"rendered":"2nd PUC Electronics Question Bank Chapter 1 Field Effect Transistor (FET)"},"content":{"rendered":"

Students can Download 2nd PUC Electronics Chapter 1 Field Effect Transistor (FET) Questions and Answers, Notes Pdf, 2nd PUC Electronics Question Bank with Answers<\/a>\u00a0helps you to revise the complete Karnataka State Board Syllabus and score more marks in your examinations.<\/p>\n

Karnataka 2nd PUC Electronics Question Bank Chapter 1 Field Effect Transistor (FET)<\/h2>\n

2nd PUC Electronics Field Effect Transistor (FET) One Mark Questions and Answers<\/h3>\n

Question 1.
\nWhat is FET?
\nAnswer:
\nField effect transistor is a three-terminal device in which the flow of current is controlled by an applied electric field.<\/p>\n

Question 2.
\nExpand the term FET.
\nAnswer:
\nFET stands for Field Effect Transistor.<\/p>\n

Question 3.
\nIs FET a current controlled device or a voltage controlled device?
\nAnswer:
\nFET is a voltage controlled device.<\/p>\n

Question 4.
\nName the terminals of FET?
\nAnswer:
\nGate, Drain, and Source.<\/p>\n

\"2nd<\/p>\n

Question 5.
\nWhat are the two main types of FET?
\nAnswer:<\/p>\n

    \n
  • Junction field effect transistor (JFET).<\/li>\n
  • Metal oxide semiconductor field effect transistor (MOSFET) or Insulated gate field effect transistor (IGFET).<\/li>\n<\/ul>\n

    Question 6.
    \nExpand JFET.
    \nAnswer:
    \nJunction Field Effect Transistor.<\/p>\n

    Question 7.
    \nExpand MOSFET.
    \nAnswer:
    \nMetal oxide semiconductor Field Effect Transistor.<\/p>\n

    Question 8.
    \nExpand IGFET.
    \nInsulated Gate Field Effect Transistor.<\/p>\n

    Question 9.
    \nMention two types of JFET.
    \nAnswer<\/p>\n

      \n
    • Junction FET<\/li>\n
    • Metal oxide semiconductor FET.<\/li>\n<\/ul>\n

      Question 10.
      \nWhat is an n channel JFET?
      \nAnswer
      \nIn channel FET has n type semiconductor bar with two p type heavily doped regions diffused on opposite sides.<\/p>\n

      \"2nd<\/p>\n

      Question 11.
      \nWhat is P channel JFET?
      \nAnswer
      \np channel FET has p type semiconductor bar with two n type heavily doped regions diffused on opposite sides.<\/p>\n

      Question 12.
      \nHow many pn junctions are present in JFET?
      \nAnswer
      \nTwo pn junctions.<\/p>\n

      Question 13.
      \nWhat is the function of the gate?
      \nAnswer
      \nGate controls the flow of charge carriers through the channel.<\/p>\n

      Question 14.
      \nDraw the symbol of n-channel JFET.
      \nAnswer:
      \n\"2nd<\/p>\n

      Question 15.
      \nDraw the symbol of p channel FET.
      \nAnswer:
      \n\"2nd<\/p>\n

      Question 16.
      \nIs FET a unipolar device or bipolar device?
      \nAnswer
      \nUnipolar device.<\/p>\n

      Question 17.
      \nName the charge carriers that are responsible for the conduction of current in a n-channel JFET?
      \nAnswer
      \nFree electrons.<\/p>\n

      \"2nd<\/p>\n

      Question 18.
      \nName the charge carriers that are responsible for the conduction of current in p-channel JFET.
      \nAnswer
      \nHoles.<\/p>\n

      Question 19.
      \nWrite the function of the source.
      \nAnswer
      \nSource supplies charge carriers for conduction.<\/p>\n

      Question 20.
      \nWhat is the function of drain?
      \nAnswer
      \nDrain collects the charge carriers supplied by the source.<\/p>\n

      Question 21.
      \nWhich is the type of potential usually applied to the gate terminal?
      \nAnswer
      \nNegative potential.<\/p>\n

      Question 22.
      \nWhat is pinch off voltage?
      \nAnswer
      \nThe negitive gate voltage at which drain current becomes zero.<\/p>\n

      Question 23.
      \nWhat is the value of drain current at pinch off condition?
      \nAnswer
      \nZero.<\/p>\n

      Question 24.
      \nName any two characteristics of JFET.
      \nAnswer<\/p>\n

        \n
      • Drain characteristics<\/li>\n
      • Transfer characteristics.<\/li>\n<\/ul>\n

        What are drain characteristics?
        \nAnswer
        \nDrain characteristics is set of curves drawn for the relationship between drain current (ID<\/sub>)
        \nand drain to source voltage (VDS<\/sub>) at a constant gate to source voltage (VGS<\/sub>).<\/p>\n

        \"2nd<\/p>\n

        Question 26.
        \nWhat are transfer characteristics?
        \nAnswer
        \nThese are the set of curves drawn for the relationship between drain current (ID<\/sub>) and gate to source voltage (VGS<\/sub>) at a constant drain to source voltage (VDS<\/sub>).<\/p>\n

        Question 27.
        \nWhat is drain resistance?
        \nAnswer
        \nThe drain resistance is the ratio of drain to source voltage VDS<\/sub> to the drain current ID<\/sub> for a constant value of gate to source voltage VGS<\/sub>.<\/p>\n

        Question 28.
        \nWhat is transconductance?
        \nAnswer
        \nIt is the ratio of change in drain current ID<\/sub> to the corresponding change in gate to source voltage VGS<\/sub> for a constant drain to source voltage VDS<\/sub>.<\/p>\n

        Question 29.
        \nWhat is the amplification factor?
        \nAnswer
        \nIt is the ratio of change in drain to source voltage VDS<\/sub> to a corresponding change in gate to source voltage VGS<\/sub> for constant drain current ID<\/sub>.<\/p>\n

        Question 30.
        \nWrite the relation between p, rd,<\/sub> and gm<\/sub>.
        \nAnswer
        \nu = rd<\/sub> x gs<\/sub><\/p>\n

        Question 31.
        \nWhat is IDSS<\/sub>?
        \nAnswer
        \nIDSS<\/sub> is the drian to source saturation current.<\/p>\n

        \"2nd<\/p>\n

        Question 32.
        \nWrite any one characteristic feature of FET.
        \nAnswer
        \nFET is voltage controlled device.<\/p>\n

        2nd PUC Electronics Field Effect Transistor (FET) Two Marks Questions and Answers<\/h3>\n

        Question 1.
        \nExpand the terms FET and MOSFET.
        \nAnswer:
        \nFET= Field Effect Transistor
        \nMOSFET= Metal oxide semiconductor Field Effect Transistor.<\/p>\n

        Question 2.
        \nDraw the circuit symbol of n-channel FET and name the terminals.
        \nAnswer:
        \n\"2nd<\/p>\n

        Question 3.
        \nWrite the functions of drain and gate.
        \nAnswer:
        \nDrain collects the charge carriers supplied by the source. Gate controls the flow of charge carriers through the channel.<\/p>\n

        Question 4.
        \nDraw the symbols of n-channel and p-channel JFET.
        \nAnswer:
        \n\"2nd<\/p>\n

        Question 5.
        \nWrite any two differences between JFET and BJT.
        \nAnswer:<\/p>\n\n\n\n\n\n
        FET<\/strong><\/td>\nBJT<\/strong><\/td>\n<\/tr>\n
        It is a voltage controlled device.<\/td>\nIt is a current controlled device.<\/td>\n<\/tr>\n
        It is a unipolar device.<\/td>\nIt is a bipolar device.<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

        \"2nd<\/p>\n

        Question 6.
        \nDescribe briefly the construction of n-channel JFET.
        \nAnswer:
        \nFET can be fabricated with either n-channel or p-channel. For fabricating n-channel FET, first a narrow bar of n type semiconductor material is taken and then two pn juntions are diffused on opposite sides of its middle part.<\/p>\n

        These junctions form two pn junctions and area between these gate is called channel. The two p regions are internally connected and a single lead is brought out which is called gate terminal. Ohmic contacts are made at the two ends of the bar called source terminals and the other drain terminal D.<\/p>\n

        Question 7.
        \nDescribe briefly the construction of p-channel JFET.
        \nAnswer:
        \nFor fabricating p-channel FET, first a narrow bar of p type semiconductor material is taken and then two pn junctions are diffused on opposite sides of its middle part. These junctions form two pn junctions and area between these gates is called the channel.<\/p>\n

        The two p regions are internally connected and a single lead is brought out which is called gate terminal. Ohmic contacts are made at the two ends of the bar called source terminals and the other drain terminal D.<\/p>\n

        \"2nd<\/p>\n

        Question 8.
        \nName the charge carriers in the current conduction of n-channel and p-channel JFETs.
        \nAnswer:
        \nN channel FET has free electrons as charge carriers and p channel FET has holes as charge carriers.<\/p>\n

        Question 9.
        \nExplain what happens to the pn junctions when the gate is reverse biased?
        \nAnswer:
        \nWhen the gate is reverse biased, the depletion regions are extended towards the channel by the application of reverse bias voltage. When VGS<\/sub>= OV, is when gate terminal is open, the drain current is maximum and flows from drain to source called LDss<\/sub> . If VGs<\/sub> is increased, the reverse bias across the junction increases reducing the width of the channel.<\/p>\n

        This makes the drain current decrease. Further increase in the reverse bias voltage widens the depletion region and the drain current ID<\/sub> further decreases. Thus the drain current in the device is mainly controlled by the reverse voltage applied across the gate-to-source voltage.<\/p>\n

        Question 10.
        \nWhat is pinch off? What is the value of drain current at pinch off?
        \nAnswer:
        \nPinch off voltage is the gate voltage at which the drain current is zero.<\/p>\n

        Question 11.
        \nDraw the circuit diagram to plot the charcteristics of n-channel JFET.
        \nAnswer:
        \n\"2nd<\/p>\n

        Question 12.
        \nExplain the terms rd<\/sub> and gm<\/sub>.
        \nAnswer:<\/p>\n

          \n
        • Ac drain resistance (rd<\/sub>) is the ratio of small change in drain to source voltage VDS<\/sub> to the corresponding change in drain current (ID<\/sub>) for a constant VGS<\/sub>.<\/li>\n
        • Transconductance (gm<\/sub>) is the ratio of change in drain current ID<\/sub> to the corresponding change in gate to source voltage VGS<\/sub> for a constant VDS<\/sub>.<\/li>\n<\/ul>\n

          \"2nd<\/p>\n

          Question 13.
          \nWhat is amplification factor? Write its relation with rd<\/sub> and gm<\/sub>.
          \nAnswer:
          \nAmplification factor is the ratio of small change in drain source voltage to the corresponding change in gate to source voltage for a constant drain current.
          \n\u03bc = rd\u00a0 <\/sub>gm<\/sub><\/p>\n

          Question 14.
          \nDerive the relation \u03bc = rd\u00a0 <\/sub>x gm
          \n<\/sub>Answer:
          \n\"2nd<\/p>\n

          Question 15.
          \nWhat is IDSS<\/sub>? Write the relation between ID<\/sub>, IDSS<\/sub>, VGS<\/sub> and Vp,IDSS<\/sub> is drain to drain to source saturation current.
          \nAnswer:
          \nIDSS\u00a0 <\/sub>is drain to drain to source saturation current.
          \n\\({ I }_{ { D } }={ I }_{ { DSS } }\\left[ 1-\\frac { { V }_{ { GS } } }{ { Vp } } \\right]\\)<\/p>\n

          \"2nd<\/p>\n

          Question 16.
          \nWhat is transconductance? Write the relation between gm<\/sub>,gmo<\/sub> ,VGs<\/sub>, and Vp<\/sub>
          \nAnswer:
          \nTransconductance is the ratio of small change in drain current (ID<\/sub>) to the corresponding change in gate to source voltage (VGS<\/sub>) for a constant drain to source voltage.
          \n\\(g_{m}=g_{m o}\\left[1-\\frac{V_{G S}}{V_{P}}\\right]\\)<\/span><\/p>\n

          2nd PUC Electronics Field Effect Transistor (FET) Three Marks Questions and Answers<\/h3>\n

          Question 1.
          \nDefine the terms
          \n(a) amplification factor
          \n(b) transconductance and
          \n(c) drain resistance
          \nAnswer:
          \n(a) Amplification factor is the ratio of change in drain to source voltage to corresponding change in gate to source voltage for a constant drain current.<\/p>\n

          (b) Transconductance is the ratio of change in drain current to corresponding change in gate to source voltage for a constant drain to source voltage.<\/p>\n

          (c) Drain resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.<\/p>\n

          Question 2.
          \nDerive the relation \u03bc = rd<\/sub> x gm<\/sub> and gm<\/sub> = gmo\u00a0 <\/sub>\\(\\left[1-\\frac{V_{c s}}{V_{p}}\\right]\\)
          \nAnswer:
          \n\"2nd<\/p>\n

          Question 3.
          \nCompare BJT and JFET.<\/p>\n\n\n\n\n\n\n\n\n\n\n
          S.No.<\/strong><\/td>\nBJT<\/strong><\/td>\nJFET<\/strong><\/td>\n<\/tr>\n
          1.<\/td>\nIt is a bipolar device.<\/td>\nIt is a unipolar device.<\/td>\n<\/tr>\n
          2.<\/td>\nIt is a current controlled device.<\/td>\nIt is a voltage controlled device.<\/td>\n<\/tr>\n
          3.<\/td>\nCurrent conduction is by both holes and electrons.<\/td>\nCurrent conduction is by holes or electrons.<\/td>\n<\/tr>\n
          4.<\/td>\nInput resistance is low.<\/td>\nInput resistance is very high. (MCI)<\/td>\n<\/tr>\n
          5.<\/td>\nBJT is more noisy.<\/td>\nJFET is less noisy.<\/td>\n<\/tr>\n
          6.<\/td>\nSwitching speed is less.<\/td>\nSwitching speed is high.<\/td>\n<\/tr>\n
          7.<\/td>\nFabrication in IC is difficult.<\/td>\nFabrication in IC is simpler.<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

          \"2nd<\/p>\n

          Question 4.
          \nExplain the working of n channel JFET.
          \nAnswer:
          \n\"2nd<\/p>\n

          Consider n channel JFET with gate to source voltage VGG<\/sub> and drain to source voltage VGG<\/sub>. When VGG<\/sub> is zero, drain current is maximum and flows from drain to source called as Lcc<\/sub>. When V0G<\/sub> is increased, reverse bias across junction increases and width of depletion region across the junctions increases. Due to this channel width decreases and hence the drain current decreases. Thus the reverse voltage applied across gate to source terminal controls the drain current. When the gate to source voltage is further increased, a stage will be reached at which two depletion regions touch each other and the drain current becomes zero. Pinch off voltage is the gate voltage at which drain current becomes zero.<\/p>\n

          Question 5.
          \nExplain the characteristics of n channel JFET with a circuit diagram.
          \nAnswer:
          \n\"2nd<\/p>\n

          Drain characteristics: It gives the relation between drain current and drain to source voltage at a constant gate to source voltage.<\/p>\n

          Ohmic region: From O to A, in the ohmic region, drain current is directly proportional to drain to source voltage.<\/p>\n

          Saturation or pinch off region: From A to B, drain current increases slowly with increase in drain to source voltage. The curve from B to C is the saturation region in which the drain current remains a constant.<\/p>\n

          Curve from C to D is the breakdown region. In this region, drain current increases rapidly with the increase in drain to source voltage.<\/p>\n

          2. Transfer characteristics: It gives the relation between drain current and gate to source voltage for a constant drain to source voltage. Keeping VDS<\/sub> constant, VGS<\/sub> is varied and corresponding ID<\/sub> are nated. The graph obtained is shown:
          \n\"2nd<\/p>\n

          2nd PUC Electronics Field Effect Transistor (FET) Five Marks Questions and Answers<\/h3>\n

          Question 1.
          \nExplain the classification of FET and the construction of a n-channel JFET.
          \nAnswer
          \nThe two types of FET are:\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 ‘<\/p>\n

            \n
          1. Junction field effect transistor. (JFET)<\/li>\n
          2. Metal oxide semiconductor field effect transistor (MOSFET) or Insulated Gate field Effect transistor (IGFET).<\/li>\n<\/ol>\n

            FET can be fabricated with either n-channel or p-channel. For fabricating n-channel FET, first a narrow bar of n-type semiconductor material is taken and then two pn juntions are diffused on opposite sides of its middle part. These junctions form two pn junctions and area between these gate is called channel. The two p regions are internally connected and a single lead is brought out which is called gate terminal. Ohmic contacts are made at the two ends of the bar called source terminal s and the other drain terminal D.<\/p>\n

            \"2nd<\/p>\n

            Question 2.
            \nDistinguish between FET and BJT.
            \nAnswer<\/p>\n\n\n\n\n\n\n\n\n\n\n
            FET<\/strong><\/td>\nBJT.<\/strong><\/td>\n<\/tr>\n
            1. It is unipolar device.<\/td>\n1. It is a bipolar device.<\/td>\n<\/tr>\n
            2. It is a voltage controlled device.<\/td>\n2. It is a current controlled devices.<\/td>\n<\/tr>\n
            3. Its input resistance is very high.<\/td>\n3. Input resistance is very low.<\/td>\n<\/tr>\n
            4. Current conduction is only by majority charge carriers either hole or electron.<\/td>\n4. Current conduction is both by electrons and holes.<\/td>\n<\/tr>\n
            5. It has high switching speed.<\/td>\n5. It has low switching speed.<\/td>\n<\/tr>\n
            6. Less noisy<\/td>\n6. More noisy.<\/td>\n<\/tr>\n
            7. Fabrication is easier in IC.<\/td>\n7. Difficult to fabricate in IC.<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

            Question 3.
            \nExplain the formation of depletion regions due to gate potential and also drain-source voltage.
            \nAnswer:
            \n\"2nd
            \nConsider an n-channel FET. The pn junctions are formed by the n-channel and p-type gate. These pn junctions are always reverse biased.
            \nThe two pn junctions are reverse biased by source VGG<\/sub>.
            \nAs the pn junctions are reverse biased, there will be only immobile positve and negative ions near the pn junction which is called depletion region. The extension of depletion region of n.<\/p>\n

            \"2nd
            \nchannel FET is heavily doped, the depletion region extends more towards n region. The reverse bias on there pn junctions can also be achieved by applying a voltage across source and drain. The source VDD<\/sub> is applied across drain to source. The drain to source voltage produces reverse bias across the gate-source junction. VDD<\/sub> makes the electrons flow from the source to drain through the channel and circuited. This reverse bias creates depletion regions within the channel.<\/p>\n

            Question 4.
            \nExplain the characteristics of n channel JFET with a circuit diagram.
            \nAnswer:
            \n\"2nd<\/p>\n

            Drain characteristics: It gives the relation between drain current and drain to source voltage at a constant gate to source voltage.<\/p>\n

            Ohmic region: From O to A, in the ohmic region, drain current is directly proportional to drain to source voltage.<\/p>\n

            Sturation or pinch off region: From A to B, drain current increases slowly with increase in drain to source voltage. The curve from B to C is the saturation region in which the drain current remains a constant.<\/p>\n

            Curve from C to D is the breakdown region. In this region, drain current increases rapidly with the increase in drain to source voltage.<\/p>\n

            Circuit to plot the characteristics of n-channel FET.
            \n\"2nd
            \nDrain characteristics: It gives the relation between drain current and drain to source voltage at a constant gate to source voltage.<\/p>\n

            Ohmic region: From O to A, in the ohmic region, drain current is directly proportional to drain to source voltage.<\/p>\n

            Sturation or pinch off region: From A to B, drain current increases slowly with increase in drain to source voltage. The curve from B to C is the saturation region in which the drain current remains a constant.<\/p>\n

            Curve from C to D is the breakdown region. In this region, drain current increases rapidly with the increase in drain to source voltage.
            \n\"2nd
            \nTransfer characteristics: It gives the relation between drain current and gate to source voltage for a constant drain to source voltage. Keeping VDS<\/sub> constant, VGS<\/sub> is varied and corresponding ID<\/sub> are nated. The graph obtained is shown in the diagram.<\/p>\n

            \"2nd<\/p>\n

            Question 5.
            \nExplain the terms ID<\/sub>, Inss<\/sub>, gm<\/sub>, gmo<\/sub> & \u03bc.
            \nAnswer
            \nI<\/span>d<\/sub> = Drain current
            \nIDss<\/sub>\u00a0= Drain to source saturation current,
            \ngs<\/sub> = Transconductance
            \n\\(\\mathbf{g}_{m o}=\\frac{-2 I_{D S S}}{V_{P}}\\)
            \nWhere Vp<\/sub> is the pinch off voltage.
            \n\u03bc = amplification factor.<\/p>\n

            Question 6.
            \nDerive the relation \u03bc = rd<\/sub> X gm<\/sub> and gmo<\/sub> = { g }_{ { mo } }\\left[ 1-\\frac { { V }_{ { GS } } }{ { V }_{ { P } } } \\right]
            \nAnswer:
            \n\"2nd
            \n<\/span><\/p>\n

            Problem with Solutions<\/span><\/p>\n

            Question 1.
            \nThe pinch-off voltage of FET is-3v and drain saturation current is 5mA. It the gate to source voltage is-2v, find the values of drain current and transconductance of the FET.
            \nAnswer:
            \n\"2nd<\/p>\n

            \"2nd<\/p>\n

            Question 2.
            \nFind the value of drain current if drain resistance rd<\/sub>= 3kQ, and drain to source voltage is 4v when the gate terminal is open.
            \nAnswer:
            \n\"2nd
            \n<\/span><\/p>\n

            Question 3.
            \nThe pinch off voltage of FET is – 3v. For a gate to source voltage – 2v, the drain current is 5mA. Calculate the drain to source saturation current.
            \nAnswer:
            \n\"2nd<\/p>\n

            Question 4.
            \nFind the value of \u03bc given rd <\/sub><\/span>=5k\u03a9, gm<\/sub><\/span> =12ms<\/sub><\/span>
            \nAnswer:
            \nrd<\/sub>= 5kQ = 5 x 103<\/sup> \u03a9
            \ngm<\/sub> = 12 ms = 12 x 10-3<\/sup>S
            \n\u03bc = rm<\/sub> x gm
            \n<\/sub>= 5 x 103<\/sup> x 12 x 10-3
            \n<\/sup>\u03bc = 60<\/p>\n

            Question 5.
            \nFind the value of gm<\/sub>, if VGS<\/sub> = -2V, Vp<\/sub> = – 6V, and gmo<\/sub> = 8 ms.
            \nAnswer:
            \n\"2nd<\/p>\n","protected":false},"excerpt":{"rendered":"

            Students can Download 2nd PUC Electronics Chapter 1 Field Effect Transistor (FET) Questions and Answers, Notes Pdf, 2nd PUC Electronics Question Bank with Answers\u00a0helps you to revise the complete Karnataka State Board Syllabus and score more marks in your examinations. Karnataka 2nd PUC Electronics Question Bank Chapter 1 Field Effect Transistor (FET) 2nd PUC Electronics …<\/p>\n","protected":false},"author":5,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[82],"tags":[],"jetpack_sharing_enabled":true,"jetpack_featured_media_url":"","_links":{"self":[{"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/posts\/23466"}],"collection":[{"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/users\/5"}],"replies":[{"embeddable":true,"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/comments?post=23466"}],"version-history":[{"count":0,"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/posts\/23466\/revisions"}],"wp:attachment":[{"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/media?parent=23466"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/categories?post=23466"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/kseebsolutions.guru\/wp-json\/wp\/v2\/tags?post=23466"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}